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Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
10
2
Top :
V GS
15.0 V
10.0 V
8.0 V
10
10
150 C
1
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
1
o
10
10
25 C
-55 C
10
2. T C = 25 C
0
-1
* Notes :
1. 250 μ s Pulse Test
o
0
o
o
* Note
1. V DS = 40V
2. 250 μ s Pulse Test
10
10
10
10
-1
0
1
-1
2
4
6
8
10
10
V DS , Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
1.0
0.8
V GS = 10V
0.6
V GS , Gate-Source Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
1
10
150 C
25 C
0.4
V GS = 20V
0
o
o
* Note : T J = 25 C
0.2
o
* Notes :
1. V GS = 0V
2. 250 μ s Pulse Test
10
0.0
0
5
10
15
20
25
30
35
40
-1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
I D , Drain Current [A]
Figure 5. Capacitance Characteristics
6000
V SD , Source-Drain Voltage [V]
Figure 6. Gate Charge Characteristics
12
5000
C iss = C gs + C gd (C ds = shorted)
C oss = C ds + C gd
C rss = C gd
10
V DS = 100V
V DS = 250V
V DS = 400V
4000
8
3000
C oss
* Notes :
6
2000
1000
C iss
C rss
1. V GS = 0 V
2. f = 1 MHz
4
2
* Note : I D = 11A
10
10
10
0
-1
0
1
0
0
5
10
15
20
25
30
35
40
45
V DS , Drain-Source Voltage [V]
Q G , Total Gate Charge [nC]
?2010 Fairchild Semiconductor Corporation
FCP11N60F Rev. C2
3
www.fairchildsemi.com
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